Başlık:
An introduction to time-of-flight secondary ion mass spectrometry (ToF-SIMS) and its application to materials science
Yazar:
Fearn, Sarah, author.
ISBN:
9781681740881
9781681742168
Ek Yazar:
Fiziksel Tanım:
1 online resource (various pagings) : illustrations (some color).
Series:
IOP concise physics,
IOP concise physics.
General Note:
"Version: 20151001"--Title page verso.
"A Morgan & Claypool publication as part of IOP Concise Physics"--Title page verso.
Contents:
Preface -- Author biography -- 1. Introduction -- 1.1. Overview -- 1.2. Basic principles
2. Practical requirements -- 2.1. Ion generation -- 2.2. Primary and sputter ion beam sources -- 2.3. Mass analysis -- 2.4. Ion detection -- 2.5. Ultra high vacuum
3. Modes of analysis -- 3.1. High-resolution mass spectra -- 3.2. Depth profiling
4. Ion beam-target interactions -- 4.1. Ion beam induced atomic mixing -- 4.2. Beam induced surface roughening and uneven etching -- 4.3. Beam induced segregation -- 4.4. Other beam induced effects -- 4.5. Depth profiling with cluster ion beams
5. Application to materials science -- 5.1. Biomaterials and tissue studies -- 5.2. Glass corrosion -- 5.3. Ceramic oxides -- 5.4. Semiconductor analysis -- 5.5. Organic electronics -- 6. Summary.
Abstract:
This book highlights the application of Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) for high-resolution surface analysis and characterization of materials. While providing a brief overview of the principles of SIMS, it also provides examples of how dual-beam ToF-SIMS is used to investigate a range of materials systems and properties. Over the years, SIMS instrumentation has dramatically changed since the earliest secondary ion mass spectrometers were first developed. Instruments were once dedicated to either the depth profiling of materials using high-ion-beam currents to analyse near surface to bulk regions of materials (dynamic SIMS), or time-of-flight instruments that produced complex mass spectra of the very outer-most surface of samples, using very low-beam currents (static SIMS). Now, with the development of dual-beam instruments these two very distinct fields now overlap.
Reading Level:
Materials scientists, researchers and engineers.
Electronic Access:
http://iopscience.iop.org/book/978-1-6817-4088-1